Gold Member Since 2015
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Shenzhen City Jia Rifeng Tai Electronic Technology Co., Ltd.

Aluminium Nitride Ceramic Plate, Insualting Aluminium Nitride Ceramic Plate, Aluminium Nitride Ceramic Plate for Heatsink manufacturer / supplier in China, offering High Strength Insualting Aluminium Nitride Ceramic Plate for Heatsink, 0.8mm Thickness Fireproof Insulatior Silicone Cloth Sheet for Electronic Equipment, Heat Dissipation Insulation Silicone Sloth for Heatsink and The Heat Disffusion Film and so on.

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Supplier Homepage Product Thermal Ceramic Series ALN Ceramic High Strength Insualting Aluminium Nitride Ceramic Plate for Heatsink

High Strength Insualting Aluminium Nitride Ceramic Plate for Heatsink

Purchase Qty.:
10-99 100-999 1,000+
FOB Unit Price: US $0.85 US $0.78 US $0.68
Purchase Qty. (Pieces) FOB Unit Price
10-99 US $0.85
100-999 US $0.78
1,000+ US $0.68
Get Latest Price
Port: Shenzhen, China
Production Capacity: 100, 000
Payment Terms: L/C, T/T, Western Union, Paypal, Money Gram

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Basic Info
  • Model NO.: TC-026
  • Feature: Long Time Materials
  • Shape: Plate
  • Thermal Conductivity: 160-190W/M-K
  • Color: Grey
  • Certification: UL, SGS, ISO9001
  • Hardness: 2400 Hra
  • Transport Package: Carton
  • Origin: China
  • Refractoriness (℃): 1580< Refractoriness< 1770
  • Type: Heat-Resistant Material
  • Material: Aln Ceramic
  • Density: 3.3G/Cm3
  • Thermal Rating: 200 200
  • Maximum Voltage: <10kv
  • Trademark: JRFT
  • Specification: Customize
  • HS Code: 8547100000
Product Description
High Strength Insualting Aluminium Nitride Ceramic Plate For Heatsink

AlN ceramic plate
1.High thermal conductivity
2.High flexural strength, high temperature
2.Good electrical insulation
Aluminium Nitride AlN Ceramic Plate
AlN Ceramic Plate
Aluminium Nitride Substrate

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation 
and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,
and the linear expansion coefficient is similar with Si,which is widely used in communication 
components, high power led, power electronic devices and other fields.Special spec products 
can be produced upon requests.

High thermal conductivity, high flexural strength, high temperature
Good electrical insulation
Low dielectric constant and loss 
Material Properties of Aluminum Nitride Substrate/Wafer
Property ContentProperty Index
Resistance to Thermal ShockNo Cracks
Thermal conductivity(30°C, W/m.k)≥170
Linear expansion coefficient 
(/°C, 5°C/min, 20-300°C)
Flexural strength (MPa)382.7
Volume Resistivity (Ω.cm)1.4×1014
Dielectric constant(1MHz)8.56
Chemical Durability (mg/cm2)0.97
Dielectric strength (KV/mm)18.45
Surface roughness Ra(μm)0.3~0.5
Camber (length‰)≤2‰
Appearance/ ColorDense/ Dark Gray
Note: The general characteristics of the materials described above were derived from laboratory 
test performed by Innovacera from time on sample quantities. Actual characteristics of production 
lots may vary.  
1.RF/Microwave Components
2.Power Modulus
3.Power Transformers
4.High Power LED package
5.Laser Diode Sub-mounts
6.LED Chip Sub-mount
7.Microelectronic Packages

Contact Information : 

We can make many specifications according to your requests. 

Free samples are available , for more information , pls kindly let me . 

Mob : +86 18270827737


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